- mpnIRFB4310PBF
- brandname: Infineon Technologies
- manufacturername: Infineon Technologies
INFINEON IRFB4310PBF Single N-Channel 100 V 7 mOhm 250 nC HEXFET Power Mosfet - TO-220-3 - 10 item(s)
- Brand: Infineon
- PartNumber: IRFB4310PBF
- Model: IRFB4310PBF
- PackageQuantity: 1
- Manufacturer: INFINEON
- Label: INFINEON
Attributes
| Key | Value |
|---|
| Alternate Mfr Part Numb. | 6504744 |
| Base Product Number | IRFB4310 |
| Case | TO220AB |
| Category | Discrete Semiconductor . |
| Channel Type | N |
| Configuration | Single |
| Current - Continuous Dr. | 130A (Tc), 10V |
| Dimensions | 10.66 x 4.82 x 9.02 mm |
| Drain Current | 130 A |
| Drain current | 140A |
| Drain to Source On Resi. | 7 mOhms |
| Drain to Source Voltage | 100 V |
| Drain to Source Voltage. | 100 V, 250 nC @ 10 V |
| Drain-source voltage | 100V |
| Drive Voltage (Max Rds . | 7mOhm @ 75A, 10V |
| Drive Voltage (Max Rds . | 10V |
| FET Feature | 300W (Tc), - |
| FET Type | MOSFET (Metal Oxide), N. |
| Forward Transconductance | 160 S |
| Forward Voltage, Diode | 1.3 V |
| Gate charge | 170nC |
| Gate Charge (Qg) (Max) . | 250 nC @ 10 V, 7670 pF . |
| Gate to Source Voltage | ?20 V |
| Gate-source voltage | ?20V |
| Input Capacitance (Ciss. | 7670 pF @ 50 V |
| Kind of channel | enhanced |
| Kind of package | Tube |
| Length | 0.419 in |
| Manufacturer | Infineon Technologies |
| Maximum Operating Tempe. | +175 ?C |
| Mfr | Infineon Technologies |
| Minimum Operating Tempe. | -55 ?C |
| Mounting | THT |
| Mounting Type | TO-220AB, Through Hole |
| Number of Elements per . | 1 |
| Number of Pins | 3 |
| On-state resistance | 7m? |
| Operating Temperature | -55?C ~ 175?C (TJ), Thr. |
| Package | Active, Tube |
| Package / Case | 100 V, TO-220-3 |
| Package Type | TO-220AB |
| Part Status | N-Channel |
| Polarisation | unipolar |
| Polarization | N-Channel |
| Power dissipation | 330W |
| Power Dissipation | 300 W |
| Power Dissipation (Max) | -55?C ~ 175?C (TJ), 300. |
| Product Header | Hexfet? Power MOSFET |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 4V @ 250?A, 7mOhm @ 75A. |
| Series | HEXFET?, Tube, HEXFET S. |
| Supplier Device Package | TO-220AB, TO-220-3 |
| Technology | HEXFET?, 130A (Tc), MOS. |
| Total Gate Charge | 170 nC |
| Turn Off Delay Time | 68 ns |
| Turn On Delay Time | 26 ns |
| Type of transistor | N-MOSFET |
| Typical Gate Charge @ V. | 170 nC @ 10 V |
| Vgs (Max) | -, ?20V |
| Vgs(th) (Max) @ Id | ?20V, 4V @ 250?A |
| Voltage, Breakdown, Dra. | 100 V |
All Prices
| Img | Seller | Supplier SKU | Min Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|
| RS Delivers | 650-4744P | 1.74 | 1 | 983 | | Infineon | | 1.74 @ 10 |
| Future Electronics | 4785275 | 2.796 | 1 | 850 | | Infineon | | 2.796 @ 10 |
 | TME | IRFB4310PBF | 2.87 | 1 | 40 | | INFINEON TECHNOLOGIES | | 2.87 @ 10 |
| Radwell | IRFB4310PBF | 4.27 | 1 | 10 | | INFINEON | | 4.27 @ 10 |
| Digi-Key | 812332 | 4.422 | 1 | 10 | | Infineon Technologies | | 4.422 @ 10 |
| us.rs-online.com | 70017020 | 5.33 | 1 | 219 | | Infineon | | 5.33 @ 10 |
| AmazonSC | B0731R4MPS | 68.5 | 1 | 10 | | Infineon | | 68.5 @ 10 |