Infineon Technologies IRFR1205PBF

mpnIRFR1205PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	44A (Tc)
Drain to Source Voltage.	55 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	65 nC @ 10 V
Input Capacitance (Ciss.	1300 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Discontinued at Digi-Key
Power Dissipation (Max)	107W (Tc)
Rds On (Max) @ Id, Vgs	27mOhm @ 26A, 10V
Series	HEXFET?
Supplier Device Package	D-Pak
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A