Case | TO220AB |
Category | Discrete Semiconductor Products |
Channel Type | N |
Configuration | Single |
Current - Continuous Drain (Id) @ 25?C | 4V, 10V |
Dimensions | 10.54 x 4.69 x 15.24 mm |
Drain Current | 36 A |
Drain current | 36A |
Drain to Source On Resistance | 0.044 Ohms |
Drain to Source Voltage (Vdss) | 74 nC @ 5 V |
Drain to Source Voltage, Package / Case, Voltage, Breakdown, Drain to Source | 100 V |
Drain-source voltage | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 44mOhm @ 18A, 10V |
Features of semiconductor devices | logic level |
FET Feature | 140W (Tc) |
FET Type | MOSFET (Metal Oxide) |
Forward Transconductance | 14 S |
Forward Voltage, Diode | 1.3 V |
Gate charge | 49.3nC |
Gate Charge (Qg) (Max) @ Vgs, Input Capacitance | 1800 pF @ 25 V |
Gate to Source Voltage | ?16 V |
Gate-source voltage, Vgs(th) (Max) @ Id | ?16V |
Height | 0.6" (15.24mm) |
Kind of channel | enhanced |
Kind of package, Series | Tube |
Length | 0.414 in |
Manufacturer, Mfr | Infineon Technologies |
Maximum Operating Temperature | +175 ?C |
Minimum Operating Temperature | -55 ?C |
Mounting | THT |
Mounting Type, Operating Temperature | Through Hole |
Mounting Type, Package Type | TO-220AB |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
On-state resistance | 44m? |
Package | Active |
Part Status, Polarization | N-Channel |
Polarisation | unipolar |
Power dissipation | 140W |
Power Dissipation | 140 W |
Power Dissipation (Max) | -55?C ~ 175?C (TJ) |
Product Header | Hexfet? Power MOSFET |
Rds On (Max) @ Id, Vgs | 2V @ 250?A |
Series | HEXFET Series |
Supplier Device Package | TO-220-3 |
Technology | 36A (Tc), HEXFET? |
Temperature Operating Range | -55 to +175 ?C |
Total Gate Charge | 74 nC |
Turn Off Delay Time | 39 ns |
Turn On Delay Time | 11 ns |
Type of transistor | N-MOSFET |
Typical Gate Charge @ Vgs | Maximum of 74 nC @ 5 V |
Vgs (Max) | - |
Width | 0 in |