Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.9A (Ta)
Drain to Source Voltage.30V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14nC @ 5V
Input Capacitance (Ciss.530pF @ 25V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-261-4, TO-261AA
Part StatusObsolete
Power Dissipation (Max)1W (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 3.9A, 10V
SeriesHEXFET?
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.4V @ 250?A
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