Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.6A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .50 nC @ 10 V
Input Capacitance (Ciss.840 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-261-4, TO-261AA
Power Dissipation (Max)1W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs31mOhm @ 4.6A, 10V
SeriesHEXFET?
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id1V @ 250?A
prev