Infineon Technologies SP001434884

mpnSP001434884
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	6.8A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	13 nC @ 10 V
Input Capacitance (Ciss.	280 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-261-3
Part Status	Active
Power Dissipation (Max)	5W (Tc)
Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Series	CoolMOS? CE
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 130?A