Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 47A (Tc)
Drain to Source Voltage. 100V
Drive Voltage (Max Rds . 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) . 135nC @ 10V
Input Capacitance (Ciss. 2500pF @ 25V
Lead Free Status / RoHS. Contains lead / RoHS n.
Manufacturer Infineon Technologies
Manufacturer Part Number SPB47N10L
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55?C ~ 175?C (TJ)
Package / Case TO-263-3, D?Pak (2 Lea.
Packaging Reel
Power Dissipation (Max) 175W (Tc)
Rds On (Max) @ Id, Vgs 26 mOhm @ 33A, 10V
Series SIPMOS?
Standard Package 1,000
Supplier Device Package PG-TO263-3-2
Technology MOSFET (Metal Oxide)
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