Attributes

Key Value
Base Product NumberSPU09P
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.7A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .21 nC @ 10 V
Input Capacitance (Ciss.450 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)42W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs250mOhm @ 6.8A, 10V
SeriesSIPMOS?
Supplier Device PackageP-TO251-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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