Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.46A (Ta), 270A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .330 nC @ 10 V
Input Capacitance (Ciss.11880 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseDirectFET? Isometric L8
Power Dissipation (Max)3.8W (Ta), 125W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs1mOhm @ 160A, 10V
SeriesHEXFET?
Supplier Device PackageDirectFET? Isometric L8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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