Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.19A (Tc)
Drain to Source Voltage.300 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .57 nC @ 10 V
Input Capacitance (Ciss.2340 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)210W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs185mOhm @ 11A, 10V
SeriesHEXFET?
Supplier Device PackagePG-TO263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 150?A
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