Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.25A (Tc)
Drain to Source Voltage.55 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 5 V
Input Capacitance (Ciss.710 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)57W (Tc)
Rds On (Max) @ Id, Vgs37mOhm @ 15A, 10V
SeriesHEXFET?
Supplier Device PackageD-PAK (TO-252AA)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250?A
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