Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13A (Ta)
Drain to Source Voltage.30 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14 nC @ 4.5 V
Input Capacitance (Ciss.1210 pF @ 15 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm .
Part StatusActive
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 13A, 10V
SeriesHEXFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.25V @ 250?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev