Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.65A
Drain to Source Voltage.150V
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .230nC @ 10V
Input Capacitance (Ciss.-
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / Casei4-Pac?-5
Part StatusActive
Power - Max-
Rds On (Max) @ Id, Vgs22mOhm @ 50A, 10V
Series-
Supplier Device PackageISOPLUS i4-PAC?
Vgs(th) (Max) @ Id4V @ 1mA
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