IXYS IXFH10N90

mpnIXFH10N90
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	10A (Tc)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	155 nC @ 10 V
Input Capacitance (Ciss.	4200 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Part Status	Obsolete
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	1.1Ohm @ 5A, 10V
Series	HiPerFET?
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 4mA