Attributes

Key Value
Base Product NumberIXFH12
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
DescriptionMOSFET N-CH 1200V 12A T.
Detailed DescriptionN-Channel 1200 V 12A (T.
Digi-Key Part NumberIXFH12N120-ND
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .95 nC @ 10 V
Input Capacitance (Ciss.3400 pF @ 25 V
ManufacturerIXYS
Manufacturer Product Nu.IXFH12N120
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)500W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
SeriesHiPerFET?
Supplier Device PackageTO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 4mA
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