IXYS IXFK360N10T

B0731RH224

IXYS IXFK360N10T IXFK360N10T Series 100 V 360 A 2.9 mOhm N-Channel Power MOSFET - TO-264AA - 25 item(s)

IXYS IXFK360N10T IXFK360N10T Series 100 V 360 A 2.9 mOhm N-Channel Power MOSFET - TO-264AA - 25 item(s)zoom

Attributes

Key Value
Base Product NumberIXFK360
CaseTO264
CategoryDiscrete Semiconductor .
Current - Continuous Dr.360A (Tc)
Drain current360A
Drain to Source Voltage.100 V
Drain-source voltage100V
Drive Voltage (Max Rds .10V
Drive Voltage (Max Rds .10V
Features of semiconduct.thrench gate power mosf.
FET Feature-
FET TypeN-Channel
Gate charge525nC
Gate Charge (Qg) (Max) .525 nC @ 10 V
Input Capacitance (Ciss.33000 pF @ 25 V
Kind of channelenhanced
Kind of packagetube
ManufacturerIXYS
MfrIXYS
MountingTHT
Mounting TypeThrough Hole
On-state resistance2.9m?
Operating Temperature-55?C ~ 175?C (TJ)
Packagetube
Package / CaseTO-264-3, TO-264AA
Part StatusActive
Polarisationunipolar
Power dissipation1250W
Power Dissipation (Max)1250W (Tc)
Rds On (Max) @ Id, Vgs2.9mOhm @ 100A, 10V
SeriesHiPerFET?, Trench
Supplier Device PackageTO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 3mA

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMEIXFK360N10T9.12125IXYS9.12 @ 25
Future Electronics307584511.12410025IXYS11.124 @ 100
Digi-Key235443312.644100025IXYS12.644 @ 25
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