Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.15A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .170 nC @ 10 V
Input Capacitance (Ciss.4500 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-204AE
Power Dissipation (Max)300W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs500mOhm @ 7.5A, 10V
SeriesHiPerFET?
Supplier Device PackageTO-204AE
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 4mA
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