Attributes

Key Value
Base Product NumberIXFN150
CategoryDiscrete Semiconductor .
Current - Continuous Dr.145A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .355 nC @ 10 V
Input Capacitance (Ciss.21000 pF @ 25 V
MfrIXYS
Mounting TypeChassis Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Part StatusActive
Power Dissipation (Max)1040W (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 75A, 10V
SeriesHiPerFET?, Ultra X2
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 8mA
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