IXYS IXFN26N90

IXFN26N90 IXYS MOSFET

IXFN26N90 IXYS MOSFETzoom

Attributes

Key Value
Base Product NumberIXFN26
CaseSOT227A
CategoryDiscrete Semiconductor .
Current - Continuous Dr.26A (Tc)
Drain to Source Voltage.900 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .240 nC @ 10 V
Input Capacitance (Ciss.10800 pF @ 25 V
ManufacturerIXYS
MfrIXYS
Mounting TypeChassis Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)600W (Tc)
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs300mOhm @ 13A, 10V
SeriesHiPerFET?
SKU81859
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
TypeTransistor N Channel MO.
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 8mA

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-Key41680629.84910In StockIXYS29.849 @ 10
thumbzoomRadwellIXFN26N9070.01In StockIXYS70.0 @ 1
Little DiodeIXFN26N9077.26475251In StockIXYS77.2647525 @ 1
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