IXYS IXFN70N60Q2

mpnIXFN70N60Q2
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Base Product Number	IXFN70
Category	Discrete Semiconductor .
Current - Continuous Dr.	70A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	265 nC @ 10 V
Input Capacitance (Ciss.	7200 pF @ 25 V
Mfr	IXYS
Mounting Type	Chassis Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	SOT-227-4, miniBLOC
Part Status	Not For New Designs
Power Dissipation (Max)	890W (Tc)
Rds On (Max) @ Id, Vgs	80mOhm @ 35A, 10V
Series	HiPerFET?, Q2 Class
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5V @ 8mA