Attributes

Key Value
Base Product NumberIXFP5N50
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.9 nC @ 10 V
Input Capacitance (Ciss.370 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)114W (Tc)
Rds On (Max) @ Id, Vgs1.65Ohm @ 2.5A, 10V
SeriesHiPerFET?, Polar3?
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 1mA
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