IXYS IXFT60N60X3HV

mpnIXFT60N60X3HV
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	60A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	51 nC @ 10 V
Input Capacitance (Ciss.	3450 pF @ 25 V
Mfr	IXYS
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-268-3, D?Pak (2 Lead.
Power Dissipation (Max)	625W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	51mOhm @ 30A, 10V
Series	HiPerFET?, Ultra X3
Supplier Device Package	TO-268HV (IXFT)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 4mA