IXYS IXFV12N90P

mpnIXFV12N90P
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	12A (Tc)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	56 nC @ 10 V
Input Capacitance (Ciss.	3080 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	380W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	900mOhm @ 6A, 10V
Series	HiPerFET?, PolarP2?
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	6.5V @ 1mA