Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.200A (Tc)
Drain to Source Voltage.55V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .109nC @ 10V
Input Capacitance (Ciss.6970pF @ 25V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)360W (Tc)
Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
Series-
Supplier Device PackageTO-263 (IXTA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
prev