Attributes

Key Value
Base Product NumberIXTA3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Tj)
Drain to Source Voltage.1000 V
Drive Voltage (Max Rds .0V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) .37.5 nC @ 5 V
Input Capacitance (Ciss.1020 pF @ 25 V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)125W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs6Ohm @ 1.5A, 0V
SeriesDepletion
Supplier Device PackageTO-263 (D2Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
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