Attributes

Key Value
Base Product NumberIXTP160
CategoryDiscrete Semiconductor .
Current - Continuous Dr.160A (Tc)
DescriptionMOSFET N-CH 100V 160A T.
Detailed DescriptionN-Channel 100 V 160A (T.
Digi-Key Part NumberIXTP160N10T-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .132 nC @ 10 V
Input Capacitance (Ciss.6600 pF @ 25 V
ManufacturerIXYS
Manufacturer Product Nu.IXTP160N10T
Manufacturer Standard L.24 Weeks
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)430W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 10V
SeriesTrench
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 250?A
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