Attributes

Key Value
Base Product NumberIXTQ36
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .85 nC @ 10 V
Input Capacitance (Ciss.5500 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Part StatusActive
Power Dissipation (Max)540W (Tc)
Rds On (Max) @ Id, Vgs170mOhm @ 500mA, 10V
SeriesPolar
Supplier Device PackageTO-3P
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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