Attributes

Key Value
Base Product NumberIXTY1
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.6A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .3.9 nC @ 10 V
Input Capacitance (Ciss.140 pF @ 25 V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)43W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs6.5Ohm @ 500mA, 10V
SeriesPolarHV?
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5.5V @ 25?A
prev