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Lambda Semiconductors PMD12K100
Description:
PMD12K100 Transistor Silicon NPN - CASE: Standard MAKE: Lambda Semiconductors

Attributes

Key ^Value
@Ic (test) (A)4.0
@VCE (test)3.0
CaseTO3
Derate Above 25?C667m
Forward Current Transfer Ratio (hFE), MIN10000
Ic Max. (A)8.0
Icbo Max. @Vcb Max. (A)5.0m
ManufacturerLambda Semiconductors
Mat.Silicon Logic
Max. hFE20k
Max. Operating Junction Temperature (Tj)200 ?C
Max. PD (W), Vbr CEO100
Maximum Collector Current |Ic max|8 A
Maximum Collector Power Dissipation (Pc)100 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|100 V
Maximum Emitter-Base Voltage |Veb|5 V
Min hFE1.0k
Oper. Temp (?C) Max.200
Pinout Equivalence Number3-14
PolarityNPN
SKU386441
Surface Mounted Yes/NoNO
TypeTransistor Silicon NPN