Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.65A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .32 nC @ 10 V
Input Capacitance (Ciss.2270 pF @ 50 V
MfrMicro Commercial Co
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)96W (Tj)
Product StatusActive
Rds On (Max) @ Id, Vgs8.6mOhm @ 20A, 10V
Series-
Supplier Device PackageDPAK (TO-252)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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