manufacturer:
Description:
Diode Silicon Carbide Schottky 650 V 10A (DC) Surface Mount DFN0808A

Attributes

Key Value
Capacitance @ Vr, F452pF @ 0V, 1MHz
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)10A (DC)
Current - Reverse Leakage @ Vr44 ?A @ 650 V
Diode TypeSilicon Carbide Schottky
MfrMicro Commercial Co
Mounting TypeSurface Mount
Operating Temperature - Junction-55?C ~ 175?C
PackageTape & Reel (TR)
Package / Case4-XQFN Exposed Pad
Product StatusActive
Reverse Recovery Time (trr)0 ns
Series-
SpeedNo Recovery Time > 500mA (Io)
Supplier Device PackageDFN0808A
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 10 A
prev