Attributes

Key Value
BrandMicrochip / Microsemi
Collector- Emitter Volt.600 V
Collector-Emitter Satur.2.2 V
ConfigurationSingle
Continuous Collector Cu.86 A
Factory Pack Quantity1
Gate-Emitter Leakage Cu.100 nA
Maximum Gate Emitter Vo.20 V
Maximum Operating Tempe.+ 150 C
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Package / CaseISOTOP-4
PackagingTube
Pd - Power Dissipation284 W
ProductIGBT Silicon Modules
Product CategoryIGBT Modules
Product TypeIGBT Modules
RoHSY
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