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Microchip Technology 2N5339U3
Description:
Bipolar (BJT) Transistor NPN 100 V 100 ?A - 1 W Through Hole U-3 (TO-276AA)

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100 ?A
Current - Collector Cutoff (Max)100?A
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 2V
Frequency - Transition, Series-
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-65?C ~ 200?C (TJ)
PackageBulk
Package / CaseTO-276AA
Power - Max1 W
Product StatusActive
Supplier Device PackageU-3 (TO-276AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)100 V