Attributes

Key Value
Base Product NumberAPT34F100
CategoryDiscrete Semiconductor .
Current - Continuous Dr.35A (Tc)
Drain to Source Voltage.1000 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .305 nC @ 10 V
Input Capacitance (Ciss.9835 pF @ 25 V
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3 Variant
Part StatusActive
Power Dissipation (Max)1135W (Tc)
Rds On (Max) @ Id, Vgs380mOhm @ 18A, 10V
SeriesPOWER MOS 8?
Supplier Device PackageT-MAX? [B2]
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 2.5mA
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