Attributes

Key Value
Base Product NumberAPT60N60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) .190 nC @ 10 V
Input Capacitance (Ciss.7200 pF @ 25 V
MfrMicrochip Technology
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)431W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs45mOhm @ 44A, 10V
SeriesCoolMOS?
Supplier Device PackageD3Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id3.9V @ 3mA
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