Attributes

Key Value
Base Product NumberAPTM100
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A
Drain to Source Voltage.1000V (1kV)
FET FeatureStandard
FET Type2 N-Channel (Half Bridg.
Gate Charge (Qg) (Max) .308nC @ 10V
Input Capacitance (Ciss.8700pF @ 25V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP4
Part StatusActive
Power - Max694W
Rds On (Max) @ Id, Vgs270mOhm @ 18A, 10V
Series-
Supplier Device PackageSP4
Vgs(th) (Max) @ Id5V @ 5mA
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