Attributes

Key Value
Base Product NumberAPTM100
CategoryDiscrete Semiconductor .
Configuration4 N-Channel (Half Bridg.
Current - Continuous Dr.18A
DescriptionMOSFET 4N-CH 1000V 18A .
Detailed DescriptionMosfet Array 1000V (1kV.
Digi-Key Part NumberAPTM100H45FT3G-ND
Drain to Source Voltage.1000V (1kV)
FET Feature-
Gate Charge (Qg) (Max) .154nC @ 10V
Input Capacitance (Ciss.4350pF @ 25V
ManufacturerMicrochip Technology
Manufacturer Product Nu.APTM100H45FT3G
Manufacturer Standard L.32 Weeks
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP3
Power - Max357W
Product StatusActive
Rds On (Max) @ Id, Vgs540mOhm @ 9A, 10V
Series-
Supplier Device PackageSP3
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 2.5mA
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