Attributes

Key Value
Base Product NumberAPTM10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.278A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .700 nC @ 10 V
Input Capacitance (Ciss.20000 pF @ 25 V
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP4
Part StatusActive
Power Dissipation (Max)780W (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 125A, 10V
Series-
Supplier Device PackageSP4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 5mA
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