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Microchip Technology JAN2N2905AL
Description:
Bipolar (BJT) Transistor PNP 60 V 600 mA 800 mW Through Hole TO-5

Attributes

Key ^Value
Base Product Number2N2905
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)600 mA
Current - Collector Cutoff (Max)1?A
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-65?C ~ 200?C (TJ)
PackageBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Power - Max800 mW
Product StatusActive
SeriesMilitary, MIL-PRF-19500/290
Supplier Device PackageTO-5
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)60 V