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Microchip Technology JANSH2N2222AL
Description:
Bipolar (BJT) Transistor NPN 50 V 800 mA - 500 mW Through Hole TO-18 (TO-206AA)

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-65?C ~ 200?C (TJ)
PackageBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Power - Max500 mW
Product StatusActive
SeriesMilitary, MIL-PRF-19500/255
Supplier Device PackageTO-18 (TO-206AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50 V