Attributes

Key Value
Base Product NumberMSC025
CategoryDiscrete Semiconductor .
Current - Continuous Dr.103A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .232 nC @ 20 V
Input Capacitance (Ciss.3020 pF @ 1000 V
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)500W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs31mOhm @ 40A, 20V
Series-
Supplier Device PackageTO-247-3
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+25V, -10V
Vgs(th) (Max) @ Id2.8V @ 1mA
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