Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.21A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .34 nC @ 20 V
Input Capacitance (Ciss.510 pF @ 1000 V
MfrMicrochip Technology
Mounting Type-
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / Case-
Power Dissipation (Max)125W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs225mOhm @ 8A, 20V
Series-
Supplier Device Package-
TechnologySiC (Silicon Carbide Ju.
Vgs (Max)+23V, -10V
Vgs(th) (Max) @ Id3.26V @ 500?A
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