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Microchip Technology MSCSM170HM087CAG
Description:
Mosfet Array 4 N-Channel (Full Bridge) 1700V (1.7kV) 238A (Tc) 1.114kW (Tc) Chassis Mount

Attributes

Key ^Value
Base Product NumberMSCSM170
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C238A (Tc)
Drain to Source Voltage (Vdss)1700V (1.7kV)
FET FeatureSilicon Carbide (SiC)
FET Type4 N-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds13200pF @ 1000V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 175?C (TJ)
PackageBulk
Package / CaseModule
Power - Max1.114kW (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs11.3mOhm @ 120A, 20V
Series, Supplier Device Package-
Vgs(th) (Max) @ Id3.2V @ 10mA