Base Product Number | MSCSM170 |
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25?C | 238A (Tc) |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
FET Feature | Silicon Carbide (SiC) |
FET Type | 4 N-Channel (Full Bridge) |
Gate Charge (Qg) (Max) @ Vgs | 712nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 1000V |
Mfr | Microchip Technology |
Mounting Type | Chassis Mount |
Operating Temperature | -40?C ~ 175?C (TJ) |
Package | Bulk |
Package / Case | Module |
Power - Max | 1.114kW (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 11.3mOhm @ 120A, 20V |
Series, Supplier Device Package | - |
Vgs(th) (Max) @ Id | 3.2V @ 10mA |