Attributes

Key Value
Base Product NumberMSCSM170
CategoryDiscrete Semiconductor .
Current - Continuous Dr.64A (Tc)
Drain to Source Voltage.1700V (1.7kV)
FET FeatureSilicon Carbide (SiC)
FET Type4 N-Channel (Three Leve.
Gate Charge (Qg) (Max) .178nC @ 20V
Input Capacitance (Ciss.3300pF @ 1000V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 175?C (TJ)
PackageBulk
Package / CaseModule
Power - Max319W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs45mOhm @ 30A, 20V
Series-
Supplier Device PackageSP3F
Vgs(th) (Max) @ Id3.2V @ 2.5mA
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