Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Drain (Idss) .8 mA @ 20 V
Drain to Source Voltage.40 V
FET TypeN-Channel
Input Capacitance (Ciss.16pF @ 20V
MfrMicrochip Technology
Mounting TypeSurface Mount
Operating Temperature-65?C ~ 175?C (TJ)
PackageBulk
Package / Case3-SMD, No Lead
Power - Max360 mW
Product StatusActive
Resistance - RDS(On)80 Ohms
SeriesMilitary, MIL-PRF-19500.
Supplier Device Package3-UB (3.09x2.45)
Voltage - Breakdown (V(.40 V
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