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Microchip Technology TP5335K1-G-VAO
Description:
P-Channel 350 V 85mA (Tj) 360mW (Ta) Surface Mount SOT-23-3

Attributes

Key ^Value
Base Product NumberTP5335
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C85mA (Tj)
Drain to Source Voltage (Vdss)350 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature, Series-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 25 V
MfrMicrochip Technology
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)360mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs30Ohm @ 200mA, 10V
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 1mA