Microsemi Corporation APT25SM120B

mpnAPT25SM120B
brandname: Microsemi Corporation
manufacturername: Microsemi Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	25A (Tc)
Drain to Source Voltage.	1200V
Drive Voltage (Max Rds .	20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	72nC @ 20V
Mfr	Microsemi Corporation
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Bulk
Package / Case	TO-247-3
Part Status	Obsolete
Power Dissipation (Max)	175W (Tc)
Rds On (Max) @ Id, Vgs	175mOhm @ 10A, 20V
Series	-
Supplier Device Package	TO-247
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+25V, -10V
Vgs(th) (Max) @ Id	2.5V @ 1mA