Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.25A (Tc)
Drain to Source Voltage.1200 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .72 nC @ 20 V
MfrMicrosemi Corporation
Mounting TypeChassis Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseD-3 Module
Power Dissipation (Max)175W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs175mOhm @ 10A, 20V
Series-
Supplier Device PackageD3
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id2.5V @ 1mA
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