Microsemi Corporation APTC60SKM35T1G

mpnAPTC60SKM35T1G
brandname: Microsemi Corporation
manufacturername: Microsemi Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	72A (Tc)
Drain to Source Voltage.	600V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	518nC @ 10V
Input Capacitance (Ciss.	14000pF @ 25V
Mfr	Microsemi Corporation
Mounting Type	Chassis Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Bulk
Package / Case	SP1
Part Status	Obsolete
Power Dissipation (Max)	416W (Tc)
Rds On (Max) @ Id, Vgs	35mOhm @ 72A, 10V
Series	-
Supplier Device Package	SP1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.9V @ 5.4mA