Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.70A
Drain to Source Voltage.100V
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .200nC @ 10V
Input Capacitance (Ciss.5100pF @ 25V
MfrMicrosemi Power Product.
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP3
Part StatusObsolete
Power - Max208W
Rds On (Max) @ Id, Vgs21mOhm @ 35A, 10V
Series-
Supplier Device PackageSP3
Vgs(th) (Max) @ Id4V @ 1mA
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